Study of the recombination zone of the NPB/Alq3 mixed layer organic light-emitting device | Zendy

Tien-Chun Lin | Zendy; ChihHung Hsiao | Zendy; JiunHaw Lee | Zendy

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Study of the recombination zone of the NPB/Alq3 mixed layer organic light-emitting device

Author(s) -

Tien-Chun Lin,

ChihHung Hsiao,

JiunHaw Lee

Publication year - 2005

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.617055

Subject(s) - oled , materials science , optoelectronics , recombination , anode , layer (electronics) , bilayer , cathode , common emitter , evaporation , light emitting diode , electrode , chemistry , physics , nanotechnology , biochemistry , membrane , gene , thermodynamics

In this paper, we demonstrated methods for determining the recombination zone in a mixed-host (MH) organic light-emitting device (OLED). The host of the emitting layer material in this device consists of a hole transport layer and an electron transport layer fabricated by co-evaporation. By comparing the spectra shift between bilayer and MH OLEDs, the recombination position with different mixing concentration can be determined. It showed the recombination zone shifts from the anode to the cathode side with increasing NPB mixing ratio.

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