Modeling of the influence of the defect position on the reflected intensity in EUV mask | Zendy

M. Besacier | Zendy; Patrick Schiavone | Zendy; Vincent Farys | Zendy; Rafik Smaâli | Zendy

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Modeling of the influence of the defect position on the reflected intensity in EUV mask

Author(s) -

M. Besacier,

Patrick Schiavone,

Vincent Farys,

Rafik Smaâli

Publication year - 2005

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.598415

Subject(s) - extreme ultraviolet lithography , resist , stack (abstract data type) , optics , lithography , extreme ultraviolet , aerial image , intensity (physics) , position (finance) , fourier transform , modal , photolithography , materials science , acoustics , layer (electronics) , physics , computer science , image (mathematics) , nanotechnology , laser , finance , quantum mechanics , artificial intelligence , polymer chemistry , economics , programming language

In Extreme Ultraviolet Lithography, the electromagnetic modeling of the mask allows to determine the influence of the mask structure on the electromagnetic field. That makes it possible to take into account the presence of a defect modifying the multi-layer stack [1][2]. This paper presents the results of simulations, performed using a modal method, on the aerial image of the reflected intensity above the resist depending on the position of a defect with respect to an absorber pattern. These simulations allow to consider the influence of a defect not only on top of the structure but also everywhere inside the multilayer. The current method is the MFE: Modal Method by Fourier Expansion. Modal methods are well adapted for EUV simulation mask due to materials and structure size

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