Temperature dependence of the threshold and Auger recombination in asymmetric quantum-well heterolasers | Zendy

Igor A. Sukhoivanov | Zendy; Olga V. Mashoshyna | Zendy; В. К. Кононенко | Zendy; Д. В. Ушаков | Zendy

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<title>Temperature dependence of the threshold and Auger recombination in asymmetric quantum-well heterolasers</title>

Author(s) -

Igor A. Sukhoivanov,

Olga V. Mashoshyna,

В. К. Кононенко,

Д. В. Ушаков

Publication year - 2004

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.583462

Subject(s) - lasing threshold , auger effect , quantum well , atomic physics , spontaneous emission , laser , auger , physics , materials science , heterojunction , optoelectronics , optics

The temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) has been determined. Processes of non-radiative Auger recombination which occur in the active region of the quantum-well lasers have been included into consideration. The analytical approach for the evaluation of the characteristic temperature of the lasing threshold is presented. For described asymmetric quantum-well heterostructure lasers, it is shown that the influence of Auger recombination processes on the temperature behavior of the lasing threshold is not essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed 80 cm-1.

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