Development of an Si/CdTe semiconductor Compton telescope
Author(s) -
T. Tanaka,
Takefumi Mitani,
Shin Watanabe,
K. Nakazawa,
Kousuke Oonuki,
Goro Sato,
Tadayuki Takahashi,
Kenichi Tamura,
H. Tajima,
Hidehito Nakamura,
M. Nomachi,
Tatsuya Nakamoto,
Yasushi Fukazawa
Publication year - 2004
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.552600
Subject(s) - semiconductor , cadmium telluride photovoltaics , telescope , computer science , physics , optics , optoelectronics , materials science , astronomy
We are developing a Compton telescope based on high resolution Si and CdTeimaging devices in order to obtain a high sensitivity astrophysical observationin sub-MeV gamma-ray region. In this paper, recent results from the prototypeSi/CdTe semiconductor Compton telescope are reported. The Compton telescopeconsists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors,combined with low noise analog LSI, VA32TA. With this detector, we obtainedCompton reconstructed images and spectra from line gamma-rays ranging from 81keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and356 keV, respectively, and the angular resolution is 9.9 degrees and 5.7degrees at 122 keV and 356 keV, respectively.Comment: 12 pages, 14 figures, submitted to SPIE conference proceedings vol. 5501, "High-Energy Detectors in Astronomy", Glasgow UK, 6/21-6/24 200
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