3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes | Zendy

Joachim Piprek | Zendy; Thomas Katona | Zendy; Steven P. DenBaars | Zendy; Simon Li | Zendy

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3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes

Author(s) -

Joachim Piprek,

Thomas Katona,

Steven P. DenBaars,

Simon Li

Publication year - 2004

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.543266

Subject(s) - optoelectronics , light emitting diode , gallium nitride , indium gallium nitride , quantum well , materials science , ultraviolet , diode , wide bandgap semiconductor , wavelength , polarization (electrochemistry) , photon , optics , physics , nanotechnology , laser , layer (electronics) , chemistry

Compact ultraviolet light sources are currently of high interest for applications in solid-state lighting, short-range communication, and bio-chemical detection. Our nitride-based light-emitting diode (LED) includes AlGaN quantum wells with an emission wavelength of approximately 340 nm. In this paper, we analyze internal device physics by three-dimensional (3D) numerical simulation. The simulation incorporated a 3D drift-diffusion model for the carrier transport, the quantum well (QW) energy band-structure including interface polarization charges, the local QW spontaneous emission spectrum, as well as 3D raytracing for photon extraction. The simulation results showed good agreement with measurements. Internal physical mechanisms such as current crowding, carrier leakage, and carrier recombination were investigated. Nanoscale effects ex hibited a strong influence on the LED performance.

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