Open AccessImmersion microlithography at 193 nm with a Talbot prism interferometer
Author(s) -
Anatoly Bourov,
Yongfa Fan,
Frank Cropanese,
Neal Lafferty,
Lena Zavyalova,
Hoyoung Kang,
Bruce W. Smith
Publication year - 2004
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.537350
Subject(s) - photoresist , optics , prism , immersion lithography , materials science , lithography , photolithography , interferometry , immersion (mathematics) , interference (communication) , resist , optoelectronics , interference lithography , laser , physics , layer (electronics) , fabrication , nanotechnology , computer science , medicine , computer network , channel (broadcasting) , mathematics , alternative medicine , pathology , pure mathematics
A Talbot interference immersion lithography system that uses a compact prism is presented. The use of a compact prism allows the formation of a fluid layer between the optics and the image plane, enhancing the resolution. The reduced dimensions of the system alleviate coherence requirements placed on the source, allowing the use of a compact ArF excimer laser. Photoresist patterns with a half pitch of 45 nm were formed at an effective NA of 1.05. In addition, a variable NA immersion interference system was used to achieve an effective NA of 1.25. The smallest half-pitch of the photoresist pattern produced with this system was 38 nm.
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