Open AccessDetermination of resist parameters using the extended Nijboer-Zernike theory
Author(s) -
Peter Dirksen,
Joseph J. M. Braat,
A. J. E. M. Janssen,
Ad Leeuwestein,
Hans Kwinten,
David Van Steenwinckel
Publication year - 2004
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.531840
Subject(s) - resist , zernike polynomials , aerial image , optics , focus (optics) , computer science , projection (relational algebra) , lens (geology) , image plane , artificial intelligence , image (mathematics) , computer vision , materials science , algorithm , physics , wavefront , nanotechnology , layer (electronics)
This study presents an experimental method,to determine the resist parameters that are at the origin of a general blurring of the projected aerial image. The resist model includes the effects of diffusion in the horizontal plane and a second cause for image blur that originates from a stochastic variation of the focus parameter. The used mathematical framework is the so-called Extended Nijboer-Zernike (ENZ) theory. The experimental procedure to extract the model parameters is demonstrated for several 193 nm resists under various conditions of post exposure baking temperature and baking time. The advantage of our approach is a clear separation between the optical parameters, such as feature size, projection lens aberrations and the illuminator setting on the one hand and process parameters introducing blur on the other. Keywords: Optical lithography, resist, diffusion constant, focus noise, point-spread function, Extended Nijboer-
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