Dual-wavelength semiconductor laser with 191-nm mode spacing | Zendy

Chi-Chia Huang | Zendy; ChingFuh Lin | Zendy

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Dual-wavelength semiconductor laser with 191-nm mode spacing

Author(s) -

Chi-Chia Huang,

ChingFuh Lin

Publication year - 2004

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.525582

Subject(s) - optoelectronics , laser , wavelength , materials science , optics , semiconductor , semiconductor laser theory , terahertz radiation , quantum well , quantum dot laser , tunable laser , physics

A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7°C. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.

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