Broadband semiconductor optical amplifiers and tunable semiconductor lasers | Zendy

ChingFuh Lin | Zendy; Yi-Shin Su | Zendy; Fei-Hung Chu | Zendy; ChiaWei Tsai | Zendy

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Broadband semiconductor optical amplifiers and tunable semiconductor lasers

Author(s) -

ChingFuh Lin,

Yi-Shin Su,

Fei-Hung Chu,

ChiaWei Tsai

Publication year - 2003

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.512588

Subject(s) - broadband , optoelectronics , semiconductor laser theory , optical amplifier , semiconductor optical gain , bandwidth (computing) , semiconductor , quantum well , laser , materials science , stimulated emission , quantum dot laser , optics , physics , computer science , telecommunications

Nonidentical multiple quantum wells (MQWs) had been widely used for broadening the emission or gain bandwidth of semiconductor optical amplifiers (SOAs). However, the carrier distribution among the MQWs is not uniform, leading to nonuniform gain contributed from different QWs. Thus using nonidentical MQWs for broadband purpose is not intuitively straightforward. Several factors need to be carefully considered. Those factors include the QW sequence, electron/hole transport time across the separate confinement hetero-structure, as well as carrier capture time. In this work, we will discuss the design of MQWs for broadband SOAs. With properly designed nonidentical MQWs, the emission bandwidth could be nearly 400 nm. Also, the tuning range of semiconductor lasers could be extended to be over 200 nm.

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