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InP-based waveguide photodetector with integrated photon multiplication
Author(s) -
Donato Pasquariello,
Joachim Piprek,
Daniel Lasaosa,
John E. Bowers
Publication year - 2003
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.510622
Subject(s) - photodetector , optoelectronics , detector , quantum efficiency , materials science , photon , optics , gallium arsenide , waveguide , saturation (graph theory) , indium phosphide , physics , mathematics , combinatorics
We report on novel InP-based traveling-wave ampliÞcation photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photode- tector ridge region with laterally conÞned InGaAsP quantum wells for ampliÞcation. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.

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