Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells | Zendy

Di-Ku Yu | Zendy; Gagik Shmavonyan | Zendy; Yi-Shin Su | Zendy; ChingFuh Lin | Zendy

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Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells

Author(s) -

Di-Ku Yu,

Gagik Shmavonyan,

Yi-Shin Su,

ChingFuh Lin

Publication year - 2003

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.474385

Subject(s) - lasing threshold , ridge , optoelectronics , bending , optical amplifier , materials science , quantum well , optics , stimulated emission , semiconductor , amplifier , gain switching , waveguide , physics , laser , geology , paleontology , cmos , composite material

Novel bi-directional propagation is observed in a shallow-etched bending ridge waveguide. The lasing light propagates in two different paths, straight way and bending way. The far-field pattern is quite different before and after the lasing condition is reached. Emission spectra of light emitted from two facets are also different. This is because the bidirectional guided effect of lasing mode occurs.

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