Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells | Zendy

ChingFuh Lin | Zendy; Yi-Shin Su | Zendy; Di-Ku Yu | Zendy; Bing-Ruey Wu | Zendy

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Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells

Author(s) -

ChingFuh Lin,

Yi-Shin Su,

Di-Ku Yu,

Bing-Ruey Wu

Publication year - 2002

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.467941

Subject(s) - optoelectronics , semiconductor laser theory , laser , quantum well , materials science , semiconductor , diode , quantum dot laser , operating temperature , degree (music) , optics , physics , thermodynamics , acoustics

Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteristics. With proper layout of the nonidentical MQWs, the characteristic temperature of the laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30 degree(s)C to 40 degree(s)C and approximately remains at this value for temperature above 40 degree(s)C. The reason is attributed to the carrier redistribution in the nonidentical MQWs as temperature increases. The change in temperature causes certain QWs to have increased carriers. Therefore their corresponding gain increases to overcome other effects that degrade temperature characteristics. With proper design of nonidentical MQWs, significant improvement on temperature characteristics of semiconductor lasers is possible.

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