Open Access<title>Indium segregation in InGaN/GaN quantum well structures</title>
Author(s) -
C. C. Yang,
ShihWei Feng,
YenSheng Lin,
YungChen Cheng,
Chi-Chih Liao,
ChinYi Tsai,
KungJeng Ma,
JenInn Chyi
Publication year - 2001
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.424737
Subject(s) - indium , materials science , optoelectronics , transmission electron microscopy , diffraction , indium gallium nitride , luminescence , quantum dot , gallium nitride , nanotechnology , optics , physics , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom