Concentration and power dependencies of level population of 2.8-μm laser transition in YLF:Er crystals under cw laser diode pumping
Author(s) -
А. М. Ткачук,
I. K. Razumova,
А. А. Мирзаева,
G. E. Novikov,
O. A. Orlov,
А. В. Малышев,
Valentin Gapontsev
Publication year - 2001
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.420947
Subject(s) - lasing threshold , laser , diode , materials science , quenching (fluorescence) , population , relaxation (psychology) , laser diode , ion , atomic physics , ionic bonding , optoelectronics , optics , chemistry , physics , fluorescence , psychology , social psychology , demography , organic chemistry , sociology
An influence of interionic cross relaxation processes (upconversion, selfquenching) on concentration and power dependences of the inverse population of ^4I_(11/2) and ^4I_(13/2) laser levels in YLF:Er crystals under CW laser-diode pumping were studied both theoretically and experimentally. Computer simulations were carried out taking into account not only pair interaction but also the multi-ion interaction in the whole system. Optimal Er concentration for 3 - µm CW lasing was estimated as 10 - 15%
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