Radiation damage and annealing in 1310-nm InGaAsP/InP lasers for the CMS tracker | Zendy

K. Gill | Zendy; G. Cervelli | Zendy; R. Grabit | Zendy; Fredrik Jensen | Zendy; F. Vasey | Zendy

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Radiation damage and annealing in 1310-nm InGaAsP/InP lasers for the CMS tracker

Author(s) -

K. Gill,

G. Cervelli,

R. Grabit,

Fredrik Jensen,

F. Vasey

Publication year - 2000

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.405342

Subject(s) - annealing (glass) , laser , optoelectronics , radiation , materials science , radiation damage , irradiation , gallium arsenide , optics , quantum well , semiconductor laser theory , physics , semiconductor , nuclear physics , composite material

Radiation damage in 1310 nm InGaAsP/InP multi-quantum-well lasers caused by 0.8 MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a uniform distribution of activation energies for annealing. This model can then be used to predict the long-term damage expected for lasers operating inside the CMS tracker. (19 refs)

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