<title>Fracture tests of etched components using a focused ion beam machine</title>
Author(s) -
Jonathan L. Kuhn,
Rainer K. Fettig,
Samuel H. Moseley,
A. Kutyrev,
Jon Orloff
Publication year - 2000
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.395707
Subject(s) - materials science , stack (abstract data type) , silicon nitride , microelectromechanical systems , etching (microfabrication) , fracture (geology) , ion beam , focused ion beam , beam (structure) , universal testing machine , silicon , reactive ion etching , stress (linguistics) , optoelectronics , composite material , ion , structural engineering , computer science , engineering , layer (electronics) , chemistry , ultimate tensile strength , programming language , linguistics , organic chemistry , philosophy
Many optical MEMS device designs involve large arrays of thin (0.5 to 1 (mu) m) components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture tests configurations for 0.5 (mu) m thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe, and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.
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