InP photodetectors for millimeter-wave applications | Zendy

Didier Decoster | Zendy; V. Magnin | Zendy; JeanPierre Vilcot | Zendy; J. Harari | Zendy; Jean-Philippe Gouy | Zendy; Manuel Fendler | Zendy; Filipe Jorge | Zendy

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InP photodetectors for millimeter-wave applications

Author(s) -

Didier Decoster,

V. Magnin,

JeanPierre Vilcot,

J. Harari,

Jean-Philippe Gouy,

Manuel Fendler,

Filipe Jorge

Publication year - 2000

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.382115

Subject(s) - photodetector , optoelectronics , photodiode , waveguide , extremely high frequency , millimeter , microwave , optical power , heterojunction , materials science , coupling (piping) , indium phosphide , optics , computer science , gallium arsenide , physics , telecommunications , laser , metallurgy

We analyze waveguide InP photodetectors for millimeter wave applications. We start with the PIN waveguide photodetector pointing out key problems like optical coupling, microwave access and maximum available power. To benefit from an internal gain we introduce the waveguide InP heterojunction phototransistor showing its ability to operate up to 60 GHz.

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