Open AccessMetal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy
Author(s) -
Ravindra S. Pokharia,
Krista R. Khiangte,
J.S. Rathore,
J. Schmidt,
J. Osten,
Apurba Laha,
Suddhasatta Mahapatra
Publication year - 2019
Publication title -
institutional repository of leibniz universität hannover (leibniz universität hannover)
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.1117/12.2509720
Subject(s) - epitaxy , responsivity , molecular beam epitaxy , materials science , optoelectronics , photodetector , photodiode , germanium , silicon , dark current , layer (electronics) , semiconductor , nanotechnology
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