Resonant tunnelling diode based high speed optoelectronic transmitters | Zendy

Jue Wang | Zendy; Abdullah AlKhalidi | Zendy; J. M. L. Figueiredo | Zendy; Edward Wasige | Zendy; G. Rodrigues | Zendy

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Resonant tunnelling diode based high speed optoelectronic transmitters

Author(s) -

Jue Wang,

Abdullah AlKhalidi,

J. M. L. Figueiredo,

Edward Wasige,

G. Rodrigues

Publication year - 2017

Publication title -

sapientia university of algarve repository (university of algarve)

Language(s) - English

Resource type - Conference proceedings

DOI - 10.1117/12.2276350

Subject(s) - resonant tunneling diode , terahertz radiation , responsivity , optoelectronics , quantum tunnelling , diode , microwave , materials science , oscillation (cell signaling) , detector , optical power , wavelength , photodetector , optics , physics , quantum well , laser , chemistry , biochemistry , quantum mechanics

Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.

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