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Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Author(s) -
Chao Shen,
Tien Khee Ng,
Changmin Lee,
John T. Leonard,
Shuji Nakamura,
James S. Speck,
Steven P. DenBaars,
Ahmed Y. Alyamani,
Munir M. ElDesouki,
Boon S. Ooi
Publication year - 2017
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.2251144
Subject(s) - optoelectronics , light emitting diode , visible light communication , materials science , phosphor , superluminescent diode , diode , color rendering index , color temperature , optics , brightness , voltage droop , solid state lighting , nitride , physics , voltage , quantum mechanics , voltage divider , layer (electronics) , composite material
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by th

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