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Materials outgassing rate decay in vacuum at isothermal conditions
Author(s) -
Alvin Huang,
George N. Kastanas,
Leonard Krämer,
Carlos E. Soares,
Ronald Mikatarian
Publication year - 2016
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.2241212
Subject(s) - outgassing , diffusion , isothermal process , materials science , chemical kinetics , kinetics , chemistry , thermodynamics , physics , organic chemistry , quantum mechanics
As a laboratory for scientific research, the International Space Station has been in Low Earth Orbit for over 17 years and is planned to be on-orbit for another 10 years. The ISS has been maintaining a relatively pristine contamination environment for science payloads. Materials outgassing induced contamination is currently the dominant source for sensitive surfaces on ISS and modelling the outgassing rate decay over a 20 to 30 year period is challenging. Using ASTM E 1559 rate data, materials outgassing is described herein as a diffusion-reaction process with the interface playing a key role. The observation of -1/2 (diffusion) or non-integers (reaction limited) as rate decay exponents for common ISS materials indicate classical reaction kinetics is unsatisfactory in modelling materials outgassing. Nonrandomness of reactant concentrations at the interface is the source of this deviation from classical reaction kinetics. A t-1/2 decay is adopted as the result of the correlation of the contaminant layer thicknesses and composition on returned ISS hardware, the existence of high outgassing silicone exhibiting near diffusion limited decay, the confirmation of nondepleted material after ten years in Low Earth Orbit, and a potential slowdown of long term materials outgassing kinetics due to silicone contaminants at the interface.

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