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Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
Author(s) -
Emmanuel Dupuy,
E. Pargon,
Marc Fouchier,
H. Grampeix,
Jonathan Pradelles,
Maxime Dar,
Patricia PimentaBarros,
S. Barnola,
O. Joubert
Publication year - 2015
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.2085812
Subject(s) - materials science , multiple patterning , photoresist , resist , surface finish , surface roughness , optics , silicon , critical dimension , optoelectronics , line (geometry) , enhanced data rates for gsm evolution , computer science , physics , nanotechnology , telecommunications , composite material , geometry , mathematics , layer (electronics)

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