<title>Interferometric phase shift technique for high-resolution deep-UV microlithography</title>
Author(s) -
Frank K. Tittel,
Joseph R. Cavallaro,
Motoi Kido,
Michael C. Smayling,
Gábor Szabó,
William L. Wilson
Publication year - 1995
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.204981
Subject(s) - photoresist , interferometry , lithography , optics , photolithography , materials science , wavelength , optoelectronics , feature (linguistics) , phase (matter) , layer (electronics) , physics , nanotechnology , quantum mechanics , linguistics , philosophy
A new phase shifting technique based on interferometry has been developed which is especially suited for deep-UV microlithography. Using only a single layer chromium mask, with no additional phase shift elements, significant resolution and contrast enhancement over conventional transmission lithography can be achieved. Both computer simulations, as well as experiments using a CCD camera and UV photoresist confirm the capabilities of this new approach. Using a relatively simple experimental setup and an illumination wavelength of 355 nm, lines with feature sizes as find as 0.3 um were achieved
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