Open AccessCarrier dynamics in dilute II-VI oxide highly mismatched alloys
Author(s) -
Yan-Cheng Lin,
Wu-Ching Chou,
Jen-Inn Chyi,
Tooru Tanaka
Publication year - 2014
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.2039837
Subject(s) - photoluminescence , exciton , electron , relaxation (psychology) , materials science , conduction band , thermal conduction , spectroscopy , recombination , activation energy , condensed matter physics , molecular physics , atomic physics , analytical chemistry (journal) , chemical physics , chemistry , optoelectronics , physics , psychology , social psychology , biochemistry , quantum mechanics , composite material , gene , chromatography
This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.
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