Laser annealing of thin semiconductor films | Zendy

Johannes Boneberg | Zendy; J. Nedelcu | Zendy; Ernst Bucher | Zendy; P. Leǐderer | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

<title>Laser annealing of thin semiconductor films</title>

Author(s) -

Johannes Boneberg,

J. Nedelcu,

Ernst Bucher,

P. Leǐderer

Publication year - 1993

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.195876

Subject(s) - annealing (glass) , materials science , recrystallization (geology) , laser , thin film , nucleation , reflectivity , optoelectronics , semiconductor , optics , diffraction , metallurgy , nanotechnology , chemistry , paleontology , physics , organic chemistry , biology

Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallization of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research