Open AccessCharge collection in a-Si:H/a-Si 1-x C x multilayers photodetectors
Author(s) -
Tao Jing,
J.C. Delgado,
J. Bertomeu,
J. Drewray,
Wan Shu Hong,
HyoungKoo Lee,
Selig N. Kaplan,
A. Mireshghi,
V. Perez-Mendez
Publication year - 1994
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - Uncategorized
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.190778
Subject(s) - photodiode , optoelectronics , materials science , quantum efficiency , photodetector , electric field , saturation current , diode , biasing , charge carrier , silicon , depletion region , semiconductor , physics , voltage , quantum mechanics
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