Measurement of charge limit in a strained lattice GaAs photocathode
Author(s) -
Pablo Sáez,
R. Alley,
H. Aoyagi,
J.E. Clendenin,
J. Frisch,
Cecilia Gärdén,
E. W. Hoyt,
Bob Kirby,
L. Klaisner,
A. Kulikov,
C. Prescott,
D. Schultz,
Huan Tang,
James L. Turner,
K. Witte,
Michael B. Woods,
M. Zolotorev
Publication year - 1993
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.158587
Subject(s) - photocathode , gallium arsenide , lattice (music) , laser , wavelength , physics , electron , optoelectronics , atomic physics , optics , saturation (graph theory) , condensed matter physics , nuclear physics , mathematics , combinatorics , acoustics
The SLAC Linear Collider (SLC) Polarized Electron Source (PES) photocathodes have shown a charge saturation when illuminated with a high intensity laser pu1se.l This charge limit in the cesium-activated GaAs crystal seems to be strongly dependent on its surface condition and on the incident light wavelength. Charge limit studies with highly polarized strained lattice GaAs materials are ptesentfd.
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