Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides | Zendy

G. Pandraud | Zendy; Eduardo MargalloBalbás | Zendy; P.M. Sarro | Zendy

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Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

Author(s) -

G. Pandraud,

Eduardo MargalloBalbás,

P.M. Sarro

Publication year - 2012

Publication title -

journal of nanophotonics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.323

H-Index - 38

ISSN - 1934-2608

DOI - 10.1117/1.jnp.6.063530

Subject(s) - refractive index , plasma enhanced chemical vapor deposition , materials science , chemical vapor deposition , plasma , optoelectronics , transverse plane , deposition (geology) , optics , physics , paleontology , structural engineering , quantum mechanics , sediment , engineering , biology

We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a sensor, we simulated the confinement factor in the slot. This simulation revealed that SiC-based slot waveguides can be used, advantangeously, for sensing as the confinement strongly varies with the refractive index of the slot material. A confinement factor change of 0.15?refractive index units was measured for different slot material

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