Open AccessFully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects
Author(s) -
Philip C. W. Ng,
Kuen-Yu Tsai,
Yen-Min Lee,
Fu-Min Wang,
JiaHan Li,
Alek C. Chen
Publication year - 2011
Publication title -
journal of micro/nanolithography mems and moems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.394
H-Index - 42
eISSN - 1932-5134
pISSN - 1932-5150
DOI - 10.1117/1.3533222
Subject(s) - extreme ultraviolet lithography , extreme ultraviolet , optical proximity correction , optics , lithography , proximity effect (electron beam lithography) , projection (relational algebra) , critical dimension , computer science , diffraction , physics , algorithm , resist , materials science , laser , layer (electronics) , composite material , electron beam lithography
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