Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition | Zendy

Jonathan Thomet | Zendy; Aman Kamlesh Singh | Zendy; Mélanie Nelly Rouèche | Zendy; Nils Toggwyler | Zendy; FranzJosef Haug | Zendy; Gabriel Christmann | Zendy; Sylvain Nicolay | Zendy; Christophe Ballif | Zendy; N. Wyrsch | Zendy; Aïcha HesslerWyser | Zendy; Mathieu Boccard | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition

Author(s) -

Jonathan Thomet,

Aman Kamlesh Singh,

Mélanie Nelly Rouèche,

Nils Toggwyler,

FranzJosef Haug,

Gabriel Christmann,

Sylvain Nicolay,

Christophe Ballif,

N. Wyrsch,

Aïcha HesslerWyser,

Mathieu Boccard

Publication year - 2022

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/6.0002039

Subject(s) - trimethylindium , materials science , plasma enhanced chemical vapor deposition , band gap , trimethylgallium , chemical vapor deposition , indium nitride , crystallinity , nitride , gallium nitride , optoelectronics , analytical chemistry (journal) , metalorganic vapour phase epitaxy , epitaxy , nanotechnology , chemistry , composite material , layer (electronics) , chromatography

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research