Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy | Zendy

Keisuke Motoki | Zendy; Zachary Engel | Zendy; Christopher M. Matthews | Zendy; Habib Ahmad | Zendy; Timothy M. McCrone | Zendy; Kohei Harada | Zendy; W. Alan Doolittle | Zendy

Open Access

Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy

Author(s) -

Keisuke Motoki,

Zachary Engel,

Christopher M. Matthews,

Habib Ahmad,

Timothy M. McCrone,

Kohei Harada,

W. Alan Doolittle

Publication year - 2022

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/6.0001974

Subject(s) - materials science , molecular beam epitaxy , heterojunction , transmission electron microscopy , indium , optoelectronics , lattice constant , scanning transmission electron microscopy , epitaxy , condensed matter physics , diffraction , optics , nanotechnology , layer (electronics) , physics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research