Open AccessObservation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy
Author(s) -
Keisuke Motoki,
Zachary Engel,
Christopher M. Matthews,
Habib Ahmad,
Timothy M. McCrone,
Kohei Harada,
W. Alan Doolittle
Publication year - 2022
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/6.0001974
Subject(s) - materials science , molecular beam epitaxy , heterojunction , transmission electron microscopy , indium , optoelectronics , lattice constant , scanning transmission electron microscopy , epitaxy , diffraction , optics , nanotechnology , layer (electronics) , physics