Open AccessInfluence of the carrier wafer during GaN etching in Cl2 plasma
Author(s) -
Thibaut Meyer,
Camille PetitEtienne,
E. Pargon
Publication year - 2022
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/6.0001478
Subject(s) - wafer , photoresist , etching (microfabrication) , x ray photoelectron spectroscopy , materials science , reactive ion etching , surface roughness , dry etching , plasma etching , analytical chemistry (journal) , silicon , plasma , chlorine , optoelectronics , nanotechnology , chemistry , chemical engineering , layer (electronics) , composite material , metallurgy , environmental chemistry , physics , quantum mechanics , engineering
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