Open AccessInterferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement
Author(s) -
Guilherme Sombrio,
Emerson Oliveira,
Johannes Strassner,
Christoph Doering,
Henning Fouckhardt
Publication year - 2021
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/6.0001209
Subject(s) - materials science , vernier scale , semiconductor , etching (microfabrication) , dry etching , optoelectronics , in situ , wafer , reactive ion etching , layer (electronics) , optics , nanotechnology , chemistry , physics , organic chemistry
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