Open AccessInfluence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition
Author(s) -
Kham M. Niang,
Guandong Bai,
John Robertson
Publication year - 2020
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/6.0000152
Subject(s) - thin film , materials science , vanadium , atomic layer deposition , analytical chemistry (journal) , wafer , raman spectroscopy , vanadium oxide , electrical resistivity and conductivity , residence time (fluid dynamics) , chemical vapor deposition , nanotechnology , chemistry , optics , metallurgy , electrical engineering , organic chemistry , physics , geotechnical engineering , engineering
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