Analysis of Silicon Germanium Standards for the Quantification of SiGe Microelectronic Devices Using AES | Zendy

Christopher F. Mallinson | Zendy; Callum G. Littlejohns | Zendy; Frédéric Y. Gardes | Zendy; J. E. Castle | Zendy; John F. Watts | Zendy

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Analysis of Silicon Germanium Standards for the Quantification of SiGe Microelectronic Devices Using AES

Author(s) -

Christopher F. Mallinson,

Callum G. Littlejohns,

Frédéric Y. Gardes,

J. E. Castle,

John F. Watts

Publication year - 2015

Publication title -

surface science spectra

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.474

H-Index - 13

eISSN - 1520-8575

pISSN - 1055-5269

DOI - 10.1116/11.20141102

Subject(s) - germanium , microelectronics , silicon , auger electron spectroscopy , silicon germanium , materials science , analytical chemistry (journal) , optoelectronics , chemistry , physics , environmental chemistry , nuclear physics

Four samples of well-defined silicon-germanium alloys were used as standards for calibration purposes to allow accurate quantification of silicon-germanium-on-insulator (SGOI) microelectronic devices using Auger electron spectroscopy. Narrow Si KLL and the Ge LMM, high resolution Si KL_2,3L_2,3 and Ge L_3M_4,5M_4,5 together with survey spectra were collected and are presented from each sample. A matrix effect was observed for silicon in germanium and calculated as 0.85 and 0.95 for the Ge77.5Si22.5 Ge52.4Si47.6 alloys respectively

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