Bromine/methanol wet chemical etching of via holes for InP microwave devices | Zendy

S. Trassaert | Zendy; B. Boudart | Zendy; S. Piotrowicz | Zendy; Y. Crosnier | Zendy

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Bromine/methanol wet chemical etching of via holes for InP microwave devices

Author(s) -

S. Trassaert,

B. Boudart,

S. Piotrowicz,

Y. Crosnier

Publication year - 1998

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.589863

Subject(s) - bromine , microwave , etching (microfabrication) , materials science , methanol , optoelectronics , realization (probability) , equivalent circuit , isotropic etching , inductance , analytical chemistry (journal) , electrical engineering , chemistry , nanotechnology , organic chemistry , physics , voltage , engineering , statistics , mathematics , layer (electronics) , quantum mechanics , metallurgy

International audienceWe report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 μμm in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit. Measurements have been performed from 50 MHz to 30 GHz. They exhibit losses of 0.1 dB at 30 GHz. The via hole equivalent circuit is found to be a resistance and an inductance in serial configuration with typical values of 0.4 Ω and 26 pH, respectively

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