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Simulations of trench-filling profiles under ionized magnetron sputter metal deposition
Author(s) -
Satoshi Hamaguchi,
S. M. Rossnagel
Publication year - 1995
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.587995
Subject(s) - trench , sputter deposition , materials science , deposition (geology) , sputtering , argon , etching (microfabrication) , ionization , high power impulse magnetron sputtering , cavity magnetron , plasma , metal , thin film , optoelectronics , analytical chemistry (journal) , atomic physics , ion , metallurgy , composite material , nanotechnology , chemistry , layer (electronics) , geology , physics , paleontology , organic chemistry , quantum mechanics , sediment , chromatography

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