Open AccessOptical properties of InAs/InP surface layers formed during the arsenic stabilization process
Author(s) -
A. Tabata,
T. Benyattou,
G. Guillot,
M. Gendry,
Guy Hollinger,
P. Viktorovitch
Publication year - 1994
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.587756
Subject(s) - arsenic , x ray photoelectron spectroscopy , substrate (aquarium) , layer (electronics) , materials science , monolayer , evaporation , analytical chemistry (journal) , luminescence , phosphorus , optoelectronics , chemistry , nanotechnology , metallurgy , chemical engineering , environmental chemistry , oceanography , physics , engineering , thermodynamics , geology
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