Open AccessAu and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating
Author(s) -
C. J. Spindt,
Masao Yamada,
Paul Meissner,
K. E. Miyano,
Alberto HerreraGómez,
W. E. Spicer,
A. J. Arko
Publication year - 1991
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.585780
Subject(s) - schottky barrier , materials science , thermal desorption , work function , schottky diode , band bending , analytical chemistry (journal) , desorption , band gap , optoelectronics , adsorption , chemistry , metallurgy , diode , metal , chromatography
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