Open AccessSchottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110)
Author(s) -
M. Alonso,
R. Cimino,
Christiane Maierhofer,
T. Chassé,
W. Braun,
K. Horn
Publication year - 1990
Publication title -
journal of vacuum science and technology b microelectronics processing and phenomena
Language(s) - English
Resource type - Journals
eISSN - 2327-9877
pISSN - 0734-211X
DOI - 10.1116/1.584949
Subject(s) - overlayer , schottky barrier , work function , band bending , indium , schottky diode , materials science , x ray photoelectron spectroscopy , band gap , surface photovoltage , deposition (geology) , synchrotron radiation , chemistry , metal , optoelectronics , optics , metallurgy , diode , spectroscopy , chemical engineering , quantum mechanics , paleontology , physics , sediment , biology , engineering
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