Open AccessDamage to III–V devices during electron cyclotron resonance chemical vapor deposition
Author(s) -
JaeMan Lee,
Kenneth D. Mackenzie,
D. Johnson,
R. J. Shul,
YoonBong Hahn,
David C. Hays,
C. R. Abernathy,
F. Ren,
S. J. Pearton
Publication year - 1999
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/1.582109
Subject(s) - electron cyclotron resonance , materials science , optoelectronics , chemical vapor deposition , heterojunction , layer (electronics) , transistor , dopant , bipolar junction transistor , doping , chemistry , ion , electrical engineering , nanotechnology , voltage , organic chemistry , engineering
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