Hyperthermal neutral beam etching

A pulsed beam of hyperthermal fluorine atoms with an average translational energy of 4.8 eV has been used to demonstrate anisotropic etching of Si. For 1.4 Hz operation, a room-temperature etch rate of 300 A/min for Si(100) has been measured at a distance of 30 cm from the source. A 14% undercutting for room-temperature etching of Novolac-masked Si features was achieved under single-collision conditions, with no detectable mask erosion. Translational energy and angular distributions of scattered fluorine atoms during steady-state etching of Si by a normal-incidence, collimated beam demonstrate that unreacted F atoms can scatter inelastically, retaining a significant fraction of their initial kinetic energies. The observed undercutting can be explained by secondary impingement of these high-energy F atoms, which are more reactive upon interaction with the sidewalls than would be expected if they desorbed from the surface at thermal energies after full accommodation. Time-of-flight distributions of volatile reaction products were also collected, and they show evidence for a dominant nonthermal reaction mechanism of the incident atoms with the surface in addition to a thermal reaction channel.