Schottky barrier height control at epitaxial NiAl/GaAs(001) interfaces by means of variable band gap interlayers | Zendy

Scott A. Chambers | Zendy

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Schottky barrier height control at epitaxial NiAl/GaAs(001) interfaces by means of variable band gap interlayers

Author(s) -

Scott A. Chambers

Publication year - 1993

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.578318

Subject(s) - schottky barrier , materials science , molecular beam epitaxy , band bending , overlayer , heterojunction , fermi level , epitaxy , ohmic contact , x ray photoelectron spectroscopy , band gap , electron diffraction , nial , band offset , photoemission spectroscopy , condensed matter physics , diffraction , optoelectronics , electron , nanotechnology , optics , intermetallic , diode , layer (electronics) , nuclear magnetic resonance , composite material , valence band , alloy , quantum mechanics , physics

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