TiN high temperature diffusion barrier for copper‐gasketed stainless‐steel flanges | Zendy

E. L. Garwin | Zendy; E. W. Hoyt | Zendy; A. R. Nyaiesh | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

TiN high temperature diffusion barrier for copper‐gasketed stainless‐steel flanges

Author(s) -

E. L. Garwin,

E. W. Hoyt,

A. R. Nyaiesh

Publication year - 1986

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.573725

Subject(s) - gasket , flange , copper , materials science , diffusion barrier , tin , metallurgy , brazing , composite material , layer (electronics) , alloy

Klystrons manufactured at the Stanford Linear Accelerator Center are typically baked at temperatures of 550 °C for times as long as 200 h. During these long bakeouts the copper‐gasketed type 304 stainless steel flange joints (seven in all) diffusion bond so intimately that the flanges can be separated only with a jacking fixture, and copper is left on the sealing surfaces. Removal of this copper necessitates the use of abrasive materials, which can result in contamination of the klystron body and compromise its reuse. We report on the use of 50 and 150 A TiN thin films as a diffusion barrier between the Cu gasket and the stainless‐steel flange.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research