X-ray standing wave analysis for bromine chemisorbed on silicon | Zendy

M. J. Bedzyk | Zendy; W. M. Gibson | Zendy; J. A. Golovchenko | Zendy

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X-ray standing wave analysis for bromine chemisorbed on silicon

Author(s) -

M. J. Bedzyk,

W. M. Gibson,

J. A. Golovchenko

Publication year - 1982

Publication title -

journal of vacuum science and technology

Language(s) - English

Resource type - Journals

eISSN - 2331-1754

pISSN - 0022-5355

DOI - 10.1116/1.571412

Subject(s) - bromine , silicon , desorption , adsorption , materials science , standing wave , position (finance) , x ray , line (geometry) , analytical chemistry (journal) , atomic physics , chemistry , optics , optoelectronics , physics , organic chemistry , metallurgy , geometry , mathematics , finance , economics

X‐ray standing wave measurements on single crystals of silicon are used to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk‐line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.

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