Rapid growth of Si by solid-phase epitaxy, including comparisons to conventional Si crystal growth
Author(s) -
R. L. Boatright,
J. O. McCaldin
Publication year - 1976
Publication title -
journal of vacuum science and technology
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2331-1754
pISSN - 0022-5355
DOI - 10.1116/1.569025
Subject(s) - epitaxy , crystal growth , dissolution , materials science , amorphous solid , substrate (aquarium) , phase (matter) , silicon , crystallography , mineralogy , optoelectronics , nanotechnology , chemistry , geology , oceanography , organic chemistry , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom