Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon | Zendy

Xi Zhang | Zendy; Daniel Connelly | Zendy; Hideki Takeuchi | Zendy; Marek Hytha | Zendy; Robert J. Mears | Zendy; L. Rubin | Zendy; TsuJae King Liu | Zendy

Open Access

Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon

Author(s) -

Xi Zhang,

Daniel Connelly,

Hideki Takeuchi,

Marek Hytha,

Robert J. Mears,

L. Rubin,

TsuJae King Liu

Publication year - 2018

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.5062366

Subject(s) - dopant , dopant activation , boron , silicon , annealing (glass) , materials science , secondary ion mass spectrometry , sheet resistance , oxygen , oxide , layer (electronics) , analytical chemistry (journal) , arsenic , diffusion , spreading resistance profiling , ion , doping , inorganic chemistry , chemical engineering , chemistry , nanotechnology , optoelectronics , metallurgy , physics , organic chemistry , chromatography , thermodynamics , engineering

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