Open AccessLow damage patterning of In0.53Ga0.47As film for its integration as n-channel in a fin metal oxide semiconductor field effect transistor architecture
Author(s) -
M. Bizouerne,
E. Pargon,
Camille PetitEtienne,
S. Labau,
Sylvain David,
M. Martin,
Pauline Burtin
Publication year - 2018
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/1.5051505
Subject(s) - materials science , optoelectronics , layer (electronics) , indium gallium arsenide , semiconductor , transistor , surface roughness , sputtering , field effect transistor , nanotechnology , gallium arsenide , thin film , composite material , electrical engineering , engineering , voltage
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