Annealing of dry etch damage in metallized and bare (-201) Ga2O3 | Zendy

Jiancheng Yang | Zendy; F. Ren | Zendy; Rohit Khanna | Zendy; Kristen Bevlin | Zendy; Dwarakanath Geerpuram | Zendy; Li-Chun Tung | Zendy; J. Y. Lin | Zendy; H. X. Jiang | Zendy; Jonathan Lee | Zendy; Elena Flitsiyan | Zendy; Leonid Chernyak | Zendy; S. J. Pearton | Zendy; Akito Kuramata | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Annealing of dry etch damage in metallized and bare (-201) Ga2O3

Author(s) -

Jiancheng Yang,

F. Ren,

Rohit Khanna,

Kristen Bevlin,

Dwarakanath Geerpuram,

Li-Chun Tung,

J. Y. Lin,

H. X. Jiang,

Jonathan Lee,

Elena Flitsiyan,

Leonid Chernyak,

S. J. Pearton,

Akito Kuramata

Publication year - 2017

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4986300

Subject(s) - annealing (glass) , materials science , schottky diode , analytical chemistry (journal) , diode , schottky barrier , photoluminescence , biasing , dry etching , plasma etching , inductively coupled plasma , optoelectronics , plasma , etching (microfabrication) , chemistry , voltage , composite material , electrical engineering , layer (electronics) , physics , chromatography , quantum mechanics , engineering

The surface of single-crystal (-201) oriented β-Ga2O3 was etched in BCl3/Ar inductively coupled plasmas under conditions (an excitation frequency of 13.56 MHz, a source power of 400 W, and a dc self-bias of −450 V) that produce removal rates of ∼700 A min−1. Annealing at 400 and 450 °C was carried out after etching on Ni/Au Schottky diodes formed on the surface either before or after the annealing step. Current–voltage (I–V) measurements were used to extract the Schottky barrier height (Φ), diode ideality factor (n), and reverse breakdown voltage (VRB) for plasma damaged diodes after annealing. Annealing at 450 °C was found to essentially restore the values of Φ, n, and VRB to their reference (unetched) values on samples metallized after etching and annealing. Thermal annealing at either temperature of metallized diodes degraded their reverse breakdown voltage, showing that Ni/Au is not stable on β-Ga2O3 at these temperatures. Photoluminescence revealed a decrease in total emission intensity in the near b...

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research