Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon | Zendy

Fares Chouchane | Zendy; B. Salem | Zendy; Guillaume Gay | Zendy; M. Martin | Zendy; E. Pargon | Zendy; F. Bassani | Zendy; S. Arnaud | Zendy; Sylvain David | Zendy; Reynald Alcotte | Zendy; S. Labau | Zendy; Jérémy Moeyart | Zendy; T. Baron | Zendy

Open Access

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

Author(s) -

Fares Chouchane,

B. Salem,

Guillaume Gay,

M. Martin,

E. Pargon,

F. Bassani,

S. Arnaud,

Sylvain David,

Reynald Alcotte,

S. Labau,

Jérémy Moeyart,

T. Baron

Publication year - 2017

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4975796

Subject(s) - materials science , etching (microfabrication) , silicon , fin , optoelectronics , plasma , inductively coupled plasma , reactive ion etching , enhanced data rates for gsm evolution , dry etching , plasma etching , surface finish , nanotechnology , layer (electronics) , physics , composite material , computer science , quantum mechanics , telecommunications

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